Part Number Hot Search : 
MRC370V3 74AHC1 IF140 MAX68 PVI5050N MAX68 A512F MC3415
Product Description
Full Text Search
 

To Download KGF1181B Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 E2Q0021-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1181B
electronic components KGF1181B
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1181B is a two-stage medium-power UHF-band amplifier that features high gain, high output power, and low power operation. The internally matched 50 W input and output eliminate external impedance-matching circuits. All specifications for this device are guaranteed at 5 V and 850 MHz. Because of the high gain and high output power, the KGF1181B is ideal as a transmitter-intermediate-stage amplifier for personal handy phones.
FEATURES
* Internally matched 50 W input and output * High linear gain: 20 dB (min.) * High output power: 11.5 dBm (min.) * Low current operation: 40 mA (max.) * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP
PACKAGE DIMENSIONS
1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15
0.36 0.74
3.00.2
1.50.15
0.3 MIN
0 to 0.15
Package material 1.90.1 2.80.15 Lead frame material 0.125
+0.03 -0
Epoxy resin 42 alloy Solder plating 5 mm or more
Pin treatment Solder plate thickness
(Unit: mm)
1/8
electronic components
KGF1181B
MARKING
(4)
(3)
CXX
(1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER
(1) IN (2) VD1 (3) OUT (4) GND
CIRCUIT
VD1(2) Cf Rf IN(1) Q1 RS1 RG1 CS1 GND(4) RG2 CS2 Q2 RS2 CC OUT(3)
2/8
electronic components
KGF1181B
ABSOLUTE MAXIMUM RATINGS
Item Supply voltage Input power Total power dissipation Channel temperature Storage temperature Symbol VDD PIN Ptot Tch Tstg Conditions Ta = 25C Ta = 25C Ta = 25C -- -- Unit V dBm mW C C Min. -- -- -- -- -45 Max. 10 6 300 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Operating current Linear gain Output power Input return loss Symbol ID GLIN PO RLIN Conditions (*1), PIN = 0 dBm (*1), PIN = -20 dBm (*1), PIN = 0 dBm (*1), PIN = -20 dBm Unit mA dB dBm dB Min. -- 20.0 11.5 -- Typ. -- -- -- -18.0 Max. 40.0 -- -- --
*1 Self-bias condition: VDD = 5.2 V, f = 850 MHz
3/8
electronic components
KGF1181B
RF CHARACTERISTICS
4/8
electronic components
KGF1181B
5/8
electronic components Typical S Parameters
KGF1181B
VDD = 5 V, ID = 25.5 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.225 0.194 0.160 0.128 0.099 0.078 0.079 0.099 0.122 0.143 0.162 0.173 0.182 0.189 0.192 0.196 0.197 0.196 0.195 0.192 0.195 0.193 0.194 0.195 0.196 0.198 -73.96 -83.51 -95.59 -113.58 -139.96 -176.28 140.16 109.32 88.58 72.45 61.99 52.98 45.27 39.56 34.22 29.98 25.53 21.33 17.92 14.26 11.84 8.31 6.31 4.04 0.81 -1.35 10.928 11.264 11.461 11.551 11.432 10.984 10.295 9.320 8.398 7.362 6.483 5.707 5.011 4.435 3.942 3.512 3.158 2.856 2.580 2.347 2.131 1.960 1.796 1.661 1.535 1.424 -34.12 -46.61 -59.58 -73.18 -87.52 -102.34 -116.91 -130.65 -143.34 -154.70 -164.55 -173.40 178.69 171.29 164.86 158.67 153.01 147.49 142.39 137.60 133.02 128.32 124.09 119.21 115.25 110.74 0.018 0.023 0.028 0.033 0.038 0.043 0.046 0.051 0.053 0.056 0.058 0.061 0.063 0.064 0.068 0.070 0.073 0.075 0.079 0.081 0.086 0.089 0.093 0.096 0.099 0.103 93.77 91.50 88.67 86.61 81.86 77.98 74.33 69.99 67.04 65.05 63.02 61.23 60.52 57.80 58.14 57.52 56.93 55.36 55.00 55.69 53.68 52.40 50.34 49.57 49.19 47.80 0.391 0.350 0.305 0.259 0.211 0.180 0.179 0.210 0.246 0.284 0.314 0.340 0.356 0.372 0.381 0.390 0.401 0.405 0.411 0.412 0.418 0.423 0.428 0.438 0.445 0.455 -61.62 -72.91 -87.74 -106.94 -133.79 -168.49 152.13 120.21 96.42 79.27 66.56 56.49 48.34 41.34 35.18 29.57 24.62 20.51 16.27 12.62 9.36 5.63 2.81 -0.43 -2.91 -6.22
6/8
electronic components Typical S Parameters
KGF1181B
VDD = 5 V, ID = 25.5 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
7/8
electronic components
KGF1181B
Test Circuit and Bias Configuration for KGF1181B
Feed through Capacitor 1000 pF 1000 pF 200 W (2) IN DC Block 1000 pF 50 W Line (1) KGF
1181B
VDD = 5 V
,,
+ - (3) Choke Coil 60 nH (4) DC Block 1000 pF 50 W Line
10 mF
OUT
Test Circuit Board for KGF 1181B
Substrate : Glass-epoxy resin ( 0.8 mmt,18 mt Cu plated both side, er=4.8 )
8/8


▲Up To Search▲   

 
Price & Availability of KGF1181B

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X